PART |
Description |
Maker |
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
TC55V200FT-85 TC55V200FT-70 |
128K Word x 16 Bit CMOS Static RAM(128K字x 16 CMOS 静RAM)
|
Toshiba Corporation
|
MSM521008 MSM521008-20JS |
128K X 8 STANDARD SRAM, 20 ns, PDSO32 From old datasheet system 131,072-Word x 8-Bit CMOS STATIC RAM
|
OKI ELECTRIC INDUSTRY CO LTD
|
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
TC551402J TC551402J-22 TC551402J-25 |
(TC551402J-22/-25) CMOS STATIC RAM 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM 131072-word ? 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM 128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation] Sony, Corp.
|
KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC55V1403J-20 TC55V1403FT-15 TC55V1403FT-20 TC55V1 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MSM52V1016LL |
65,536-Word ×16-Bit CMOS STATIC RAM(64k字6位静态RAM) From old datasheet system 65,536-Word x 16-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
MSM521216 |
65,536-Word ?16-Bit CMOS STATIC RAM(64k瀛??6浣????AM) From old datasheet system 65,536-Word x 16-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|